, dnc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 mps-u07 npn silicon annular amplifier transistor . . . designed for general-purpose, high-voltage amplifier and driver applications. high collector-emitter breakdown voltage ? = 1-omadc ? high power dissipation - prj = 10 w@tc = 25c complement to pnp mps-u57 maximum ratings rating collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous total power disiipaton @ ta - 25c derate above 25c total power disiipaton @ tc - 25c derate above 25c operating and storage junction temperature range symbol vceo veb 100 1.0 8.0 10 80 watt mw/c watts mw/c thermal characteristics characurittk thermal resistance, junction to case thermal resistance, junction to ambient symbol r?ja 12.5 c/w c/w npn silicon amplifier transistor //n\ ^ d? . ? a ? ? b ? e b c h- q k c l [ jok -ju. -4? n style 1: pin 1. emitter 2. base 3. collector millimeters dim mim a 9.14 b 6.6g c 5.41 d 0.38 f 3.18 g 2.' h 3.94 1 0.36 k 12.07 i 25.02 n 5.1 q 2.39 r .14 max 9.53 7.24 5.66 0.53 3.33 4bsc 4.19 0.41 12.70 25.53 18 3sc 2.69 1.40 inches min 0,360 0.260 0.213 0.015 0,125 0.10 0.155 0.014 0.475 0.985 max 0.375 0.285 0.223 0.021 0.131 bsc 0.165 0.016 0.500 1.005 0.200 bsc 0.094 0,045 1 0.106 0.055 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. oiinlifv
c^emi-c-on.au.ctoi lpioaucti., one. 20 stern ave. springfield, new jersey 07081 u.s.a. mps-u07 telephone: (201) 376-2922 (212)227-6005 fax: (201) 376-8960 electrical characteristics (ta = 25c unless otherwise noted) characteristic symbol typ mix unit off characteristics collector-emitter breakdown voltage ^' (ic" i.omadc, ib *0) emitter-base breakdown voltage (ie - loouadc. lc-0) collector cutoff current (vcb ?= so vdc, ie -0) bvceo bvebo icbo 100 4.0 - ? - - ? - 100 vdc vdc nadc on characteristics dc current gain 1 1 ) (lc - 50 madc. vce ? 1 vdc) iic - 250 madc. vce - '?<> vdc> (ic ? 500 madc. vce ? 1 .0 vdc) collector-emitter saturation voltage itl (1c * 250 madc, ib * 10 madc) (ic-25omadc, ib = 25 madc) base-emitter on voltage hi (ic - 250 madc. vce " 5-0 vdcl hfe vce (sat) vflelon) 60 30 - - - - 110 65 33 0.18 0.1 0.76 - - - 0.4 - 1.2 _ vdc vdc small-signal characteristics current-gain-bandwidth product (11 (1c " 250 madc, vce -5.0 vdc, f = 100 mhz) output capacitance (vcb - 10 vdc, ie - o, f - 100 khz) fr cob 50 ? 150 6.0 - 12 mhz pf t.jt pulia width 5300 ml, duty cycle 2.0% figure 1 - dc current gain figure 2 - "on" voltages 200 1 j .00-; s ": s "-- s u * vce -10v ? ~ dt - ? l:^ ^ s \0 7.0 to 20 50 70 100 200 s? 1c, collector current (nva) figure 3 - dc safe operating area s.o i" 1c. collector ctlrrei 111 i 2 s " b z? ? t --, und brmkdown l |
